نمایش اطلاعات مقاله ژورنالی 
اطلاعات کامل مقاله ژورنالی
عنوان مقاله:Electrical transport, microstructure and optical properties of Cr-doped In< sub> 2 O< sub> 3 thin film prepared by sol-gel method
چکیده مقالهHigh transparent In2O3 and Cr-doped In2O3 (In2xCrxO3) nanocrystalline thin films were prepared using a simple sol–gel method followed by a spin coating technique. The effect of Cr concentration on the structural, microstructure, electrical and optical properties of In2xCrxO3 were systematically investigated using X-ray diffractometer (XRD), atomic force microscopy (AFM), UV–vis spectroscopy, field emission scanning electron microscopy (FESEM) and Hall effect technique. The films have good crystallization with preferred orientation to (222) direction. The lattice parameters, a, of In2O3 system increased at lowest dopants (x = 0.025) and decreased as the dopant was further increased. The optical transmittance of films increased up to 98% for x = 0.05 and decreased for further Cr concentrations. From AFM measurement the films nanocrystals morphology was depending on Cr concentrations. The band gap was around 3.76 eV for pure and with x 6 0.075 however it increased. The effect of Cr concentrations on conducting mechanisms of In2O3 film has been investigated from 80 to 300 K using thermal activated conduction band and hopping models. The films, at x = 0.0–0.075, have typical semiconductor behaviour. Three different conducting mechanisms have been estimated. All thermal activation energies and conduction hopping parameters have been determined and analysed in details
عنوان مجله علمی:Journal of Alloys and Compounds
سال چاپ:2013
درجه علمی مجله:ISI
ضریب تأثیر:0
شماره شناسایی مجله(ISNN):0925-8388
شماره سری چاپ(Volume):575
شماره چاپ(Issue):12
شماره صفحات مقاله:198–206
نویسندگان:محمد حسن عبدی-